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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1448 DESCRIPTION *With TO-220 package *High collector-emitter breakdown voltage : VCEO=150V(min) APPLICATIONS *Power amplifier applications *Vertical output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 150 150 5 1.5 0.5 1.5 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1448 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50m A 1.5 V A ICBO Collector cut-off current VCB=150V;IE=0 20 IEBO Emitter cut-off current VEB=5V; IC=0 20 A hFE DC current gain IC=0.5A ; VCE=10V 40 140 fT Transition frequency IC=0.5A ; VCE=10V 5 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1448 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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